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Issue 16, 2019
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Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications

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Abstract

The combination of ferroelectricity with narrow-gap high-mobility semiconductors may not only entail both functions of nonvolatile memory and efficient manipulation of signals, but may also facilitate efficient ferroelectric photovoltaics and thermoelectrics. However, these applications are hindered by the wide gap and poor mobility of current ferroelectrics. A recent study (J. Am. Chem. Soc., 2018, 140, 3736) reported a facile, general, low-temperature, and size tunable solution phase synthesis of NaBiS2 and NaBiSe2 that are made of relatively abundant or biocompatible elements, which enables their large-scale practical applications. Herein we show first-principles evidence of their ferroelectricity with a large polarization (∼33 μC cm−2), a moderate bandgap (∼1.6 eV) and a high electron-mobility (∼104 cm2 V−1 s−1). Although they have a relatively small switching barrier, their ferroelectricity can be robust under ambient conditions with enhanced polarization upon either application of a small tensile strain or ion doping, where distortion can be increased and multiferroics may also be obtained, despite reduced mobility. Considering previous reports on photovoltaics and thermoelectrics of similar compounds, sodium bismuth dichalcogenides might be tuned for higher performance with the coexistence of these desirable properties.

Graphical abstract: Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications

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Publication details

The article was received on 18 Jan 2019, accepted on 22 Mar 2019 and first published on 22 Mar 2019


Article type: Paper
DOI: 10.1039/C9CP00336C
Citation: Phys. Chem. Chem. Phys., 2019,21, 8553-8558

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    Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications

    T. Zhong, M. Pan, G. Gao, H. Fu, M. Wu and J. Liu, Phys. Chem. Chem. Phys., 2019, 21, 8553
    DOI: 10.1039/C9CP00336C

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