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Issue 8, 2019
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Oxygen diffusion in amorphous and partially crystalline gallium oxide

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Abstract

Oxygen transport in amorphous (a-GaO1.5) and partially crystalline (a/c-GaO1.5) gallium oxide was studied by means of 18O/16O isotope exchange experiments and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Thin films of a-GaO1.5 were deposited by pulsed laser deposition (PLD) on alumina substrates at room temperature in an oxygen atmosphere. Oxygen tracer diffusion coefficients D* and oxygen surface exchange coefficients k* were determined as a function of temperature, 300 ≤ T/°C ≤ 370, and as a function of oxygen partial pressure, 2 ≤ p(O2)/mbar ≤ 500 at a temperature of T = 330 °C. The activation energy of oxygen tracer diffusion in amorphous gallium oxide was found to be EA = 0.8 eV. In addition, the time-temperature-transformation (TTT) diagram of crystallisation of amorphous gallium oxide was determined.

Graphical abstract: Oxygen diffusion in amorphous and partially crystalline gallium oxide

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Publication details

The article was received on 16 Oct 2018, accepted on 17 Dec 2018 and first published on 20 Dec 2018


Article type: Paper
DOI: 10.1039/C8CP06439C
Citation: Phys. Chem. Chem. Phys., 2019,21, 4268-4275

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    Oxygen diffusion in amorphous and partially crystalline gallium oxide

    A. von der Heiden, M. Bornhöfft, J. Mayer and M. Martin, Phys. Chem. Chem. Phys., 2019, 21, 4268
    DOI: 10.1039/C8CP06439C

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