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Crack-free high quality 2-μm-thick Al0.5Ga0.5N grown on Si substrate with a superlattice transitional layer

Abstract

The utilization of Si substrate to fabricate AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is deemed as an effective way to improve light extraction efficiency with the thin-film flip-chip architecture, which calls for crack-free high-quality high Al-content AlGaN film grown on Si. In this letter, we reported the successful growth of a crack-free high-quality 2-μm-thick Al0.5Ga0.5N film grown on planar Si by metal-organic chemical vapor deposition. A smooth surface with a root-mean-square roughness of 1.5 nm was obtained by employing a superlattice transitional layer. Double crystal X-ray rocking curves yielded full widths at half maximum of 499 and 648 arcsec for the Al0.5Ga0.5N (0002) and (10-12) reflection planes, respectively, revealing a low threading dislocation density of 3.3 × 109 cm-2. This work paves the way for the realization of cost-effective high-performance AlGaN-based DUV LEDs and photodetectors grown on Si platform.

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Publication details

The article was received on 23 Oct 2019, accepted on 26 Nov 2019 and first published on 26 Nov 2019


Article type: Paper
DOI: 10.1039/C9CE01677E
CrystEngComm, 2019, Accepted Manuscript

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    Crack-free high quality 2-μm-thick Al0.5Ga0.5N grown on Si substrate with a superlattice transitional layer

    Y. Huang, J. Liu, X. Sun, X. Zhan, Q. Sun, H. Gao, M. Feng, Y. Zhou, M. Ikeda and H. Yang, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C9CE01677E

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