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High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

Abstract

The dielectric constant of metastable ε-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga2O3/indium tin oxide/yttria-stabilized zirconia. The dielectric ε-Ga2O3 layer was grown by the facile solution route of mist chemical vapor deposition at atmospheric pressure. The highest dielectric constant of nearly 32 (at 10 kHz of AC frequency) was about three times larger than that of the most stable β-Ga2O3 phase. The high dielectric constant is attributed to the polar structure of the ε-Ga2O3 unlike β-Ga2O3, and is comparable to those of so-called high-κ dielectic oxides. The combination of wide bandgap and high dielectric constant would be beneficial for the future development of optoelectrical devices.

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Publication details

The article was received on 27 Sep 2019, accepted on 27 Nov 2019 and first published on 28 Nov 2019


Article type: Paper
DOI: 10.1039/C9CE01532A
CrystEngComm, 2019, Accepted Manuscript

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    High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

    S. Yusa, D. Oka and T. Fukumura, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C9CE01532A

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