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Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

Abstract

In this paper we demonstrate a low-temperature aqueous solution process, based on a continuous flow reactor design, for the long-duration continuous growth of ZnO epitaxial layers at a constant growth rate without interruption. Using a strategy of site-controlled epitaxial growth of ZnO, we grew patterned ZnO mesas having hexagonal honeycomb structures on top of lattice-matched patterned ZnAl2O4 buffer layers. Subsequently, we applied the continuous flow reactor for long-duration lateral epitaxial overgrowth (LEO) of ZnO layers on the honeycomb-patterned ZnO mesas. Dislocation etch pit analysis suggested a dislocation density for the coalesced LEO-grown ZnO layer of approximately 10^8 cm–2. X-ray diffraction revealed that the combination of LEO and a hexagonal honeycomb geometry is a promising approach for preparing wing-tilt-free thick ZnO layers displaying substantial strain relief. The micro-photoluminescence spectra of the overgrown wings featured a more intense band edge emission, confirming the significant improvement in crystalline quality in the wing regions.

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Publication details

The article was received on 22 Sep 2019, accepted on 04 Dec 2019 and first published on 04 Dec 2019


Article type: Paper
DOI: 10.1039/C9CE01500K
CrystEngComm, 2019, Accepted Manuscript

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    Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

    H. Chen, W. Huei-Sen, Y. Shu-Han and L. Xuan-Chen, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C9CE01500K

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