Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

Abstract

Large-area, uniform, and high quality continuous monolayer MoS₂ was successfully grown on a SiO₂/Si substrate, demonstrated using diverse analytical testing techniques. To achieve reproducible results, we discuss the influence of carrier gas flow on MoS₂ growth in detail. Based on the results of the discussion, we present a possible deposition mechanism and growth process of continuous monolayer MoS₂. Back-gated field effect transistors (FETs) based on an in situ, as-grown monolayer MoS₂ film showed a carrier mobility of ∼9.8 cm² V⁻¹ s⁻¹ and an I_on/I_off of ∼3.1 × 10⁶. These values offer insight into the potential applications of monolayer MoS₂ in microelectronics and photoelectronics. Our results reveal that the controllable preparation of high quality continuous monolayer MoS₂, or other ultrathin 2D materials, can be achieved via optimisation and adjustment of carrier gas flow.