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Issue 40, 2019
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Chemical epitaxy of a new orthorhombic phase of Cu2−xS on GaAs

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Abstract

We report a new binary base-centered orthorhombic phase of Cu2−xS. The new phase was obtained by chemical epitaxy on the (001), (111)A and (111)B faces of GaAs. Chemical analysis showed a Cu to S ratio of slightly less than 2 : 1, along with no evidence for other cations which can potentially replace Cu. Cross-sectional and plan-view samples were studied by TEM along multiple zone axes of Cu2−xS films and several GaAs orientations. Electron diffraction and fast Fourier transform patterns were analyzed and compared to the simulated data of known Cu2−xS phases with no match. A match was found with a new, base-centered orthorhombic unit cell with lattice parameters of ab = 5.6 Å and c = 11.2 Å. Seven different variations confirmed the well-defined orientation relationship existing between the base-centered orthorhombic phase of Cu2−xS and the GaAs substrate.

Graphical abstract: Chemical epitaxy of a new orthorhombic phase of Cu2−xS on GaAs

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Publication details

The article was received on 14 Jul 2019, accepted on 03 Sep 2019 and first published on 03 Sep 2019


Article type: Paper
DOI: 10.1039/C9CE01096C
CrystEngComm, 2019,21, 6063-6071

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    Chemical epitaxy of a new orthorhombic phase of Cu2−xS on GaAs

    O. Friedman, D. Braun, N. Maman, V. Ezersky and Y. Golan, CrystEngComm, 2019, 21, 6063
    DOI: 10.1039/C9CE01096C

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