Issue 38, 2019

Size and crystallinity control of dispersed VO2 particles for modulation of metal–insulator transition temperature and hysteresis

Abstract

VO2 particles with a reduced size enable the optimization of its metal–insulator transition (MIT) temperature and hysteresis width. The accurate modulation of particle size and the underlying mechanism of transition behavior remains a critical issue. In this study, the annealing process of a V2O5 precursor film was systematically controlled with the guidance of the V–O phase diagram. The film undergoes a synergistic solid-state dewetting and pyrolysis process in the first step to form dispersed VO2 particles, and then a crystallization process to achieve the preferred orientation, which allows fine control of the particle size and crystallinity by thickness control of the precursor film. Then, the MIT behavior of VO2 particles with controlled sizes from 220 nm to 1.64 μm was systematically investigated. With decreasing size, the MIT temperature decreases and then increases with enlarged hysteresis. A minimum MIT temperature of 41 °C without hysteresis was realized. Size dependent crystallinity, strain and defect analyses showed that compressive stress dominates the MIT behavior of larger sized particles, while surface tensile stress and surface defect effects become prominent in smaller sized particles. This work provides a feasible strategy to control the size effect of dispersed VO2 particle films and deepen our understanding on the MIT behavior in single domains.

Graphical abstract: Size and crystallinity control of dispersed VO2 particles for modulation of metal–insulator transition temperature and hysteresis

Supplementary files

Article information

Article type
Paper
Submitted
29 Jun 2019
Accepted
09 Aug 2019
First published
12 Aug 2019

CrystEngComm, 2019,21, 5749-5756

Size and crystallinity control of dispersed VO2 particles for modulation of metal–insulator transition temperature and hysteresis

W. Zeng, H. Lai, T. Chen, Y. Lu, Z. Liang, T. Shi, K. Chen, P. Liu, F. Xie, J. Chen, J. Xu, Q. Chen and W. Xie, CrystEngComm, 2019, 21, 5749 DOI: 10.1039/C9CE01013K

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