Jump to main content
Jump to site search

Issue 34, 2019
Previous Article Next Article

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

Author affiliations

Abstract

We studied the non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate along the [0001] crystallographic direction of GaN. The XRC-FWHM values of the optimized a-plane GaN were 386 arcsec along the c-axis and 289 arcsec along the m-axis. Detailed scanning electron microscopy (SEM), X-ray diffraction (XRD) reciprocal space maps (RSMs) and Raman scattering studies were performed to investigate the growth kinetics. It was found that the increase in mosaic block dimension could be the primary reason for the improved crystal quality. This work shows a very promising and simple method to achieve high-quality a-plane GaN films.

Graphical abstract: Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

Back to tab navigation

Publication details

The article was received on 27 Jun 2019, accepted on 19 Jul 2019 and first published on 02 Aug 2019


Article type: Paper
DOI: 10.1039/C9CE00995G
CrystEngComm, 2019,21, 5124-5128

  •   Request permissions

    Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

    S. Yan, J. Die, C. Wang, X. Hu, Z. Ma, Z. Deng, C. Du, H. Jia, Y. Jiang and H. Chen, CrystEngComm, 2019, 21, 5124
    DOI: 10.1039/C9CE00995G

Search articles by author

Spotlight

Advertisements