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High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach

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Abstract

In this paper, a two-step growth approach was proposed to deposit a Ge-rich Si1−xGex epilayer directly on a Si substrate by reactive thermal CVD (RTCVD) at low temperature (350 °C). The two-step growth process included seed layer epitaxial growth, post-annealing, and a second epitaxial growth step. The effect of the two-step growth approach on the crystalline quality of the Si1−xGex epilayer was investigated. Raman and TEM measurements indicate that a perfect Si1−xGex film structure, with few in-film defects, can be achieved by the two-step approach, and the resulting Si1−xGex films exhibited an RMS roughness of 1.02 nm with a threading dislocation density of ∼4.5 × 105/cm2 and a degree of strain relaxation of up to 100%. These results suggest that two-step growth, combined with annealing, is a good approach to fabricate a high-quality Si1−xGex epilayer by RTCVD at low temperature.

Graphical abstract: High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach

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Publication details

The article was received on 19 Jun 2019, accepted on 30 Sep 2019 and first published on 01 Oct 2019


Article type: Paper
DOI: 10.1039/C9CE00948E
CrystEngComm, 2019, Advance Article

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    High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach

    K. Tao, J. Wang, S. Jiang, R. Jia, Z. Jin and X. Liu, CrystEngComm, 2019, Advance Article , DOI: 10.1039/C9CE00948E

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