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Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

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Abstract

Epitaxial integration of BaTiO3 (BTO)/CoFe2O4 (CFO) multiferroic heterostructure directly on GaN semiconductor was demonstrated using pulsed laser deposition. The domain matching epitaxy mechanism was revealed to be (111)[1[1 with combining macron]0] BTO//(111)[1[1 with combining macron]0] CFO//(0002)[11[2 with combining macron]0] GaN. Spinel CFO thin films with a layer-by-layer growth mode on GaN not only served as the ferrimagnetic functional layer, but also as a buffer layer, inducing an epitaxial growth of perovskite BTO ferroelectric thin films on wurtzite GaN by greatly reducing lattice mismatch at the BTO/GaN interface. The designed BTO/CFO/GaN heterostructure displayed high crystallinity, dense microstructure and good interfacial state. More importantly, good ferroelectric properties for the BTO layer with a remanent polarization of 5.5 μC cm−2 and magnetic properties for the CFO layer with a saturation magnetization of 169 emu cm−3 at room temperature were also demonstrated. Thus, the epitaxial integration of high performance BTO/CFO multiferroic heterostructure with GaN could add more functional degrees of freedom for designing advanced microelectronic devices on a GaN semiconductor platform.

Graphical abstract: Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

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Publication details

The article was received on 16 Jun 2019, accepted on 15 Aug 2019 and first published on 19 Aug 2019


Article type: Paper
DOI: 10.1039/C9CE00932A
CrystEngComm, 2019, Advance Article

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    Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

    G. Li, X. Li, Q. Zhu, J. Zhao and X. Gao, CrystEngComm, 2019, Advance Article , DOI: 10.1039/C9CE00932A

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