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A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

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Abstract

We report a low-power and low-temperature radio frequency reactive magnetron sputtering to grow highly c-axis oriented wurtzite Al0.36In0.64N thin films on a Si (111) substrate using a unique AlN/AlInN bi-layer buffer, which creates the possibility to grow high crystal quality Al0.36In0.64N.

Graphical abstract: A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

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Publication details

The article was received on 26 May 2019, accepted on 11 Jul 2019 and first published on 11 Jul 2019


Article type: Communication
DOI: 10.1039/C9CE00813F
CrystEngComm, 2019, Advance Article

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    A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

    W. Lu, X. Wang, Y. Ma, S. Grasso and M. Xu, CrystEngComm, 2019, Advance Article , DOI: 10.1039/C9CE00813F

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