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Issue 8, 2019
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Seeded growth of bulk ZnO crystals in a horizontal tubular furnace

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Abstract

An optimized seeded chemical vapor transport (CVT) method was proposed to grow crack-free bulk ZnO crystals using a conventional horizontal tubular furnace. A silica seed pedestal with a hole in the center is designed to minimize the contact areas between the crystal and the ampoule and thus, suppress generation of thermal stress and cracks. Stable and controlled growth on the seed is achieved. The X-ray rocking curve with a full width at half-maximum (FWHM) of 39 arcsec for the (002) reflection indicates the good crystallinity of the as-grown crystal. Regular micro-growth steps observed by scanning electron microscopy (SEM) indicate that stable growth on the solid–vapor interface is achieved. Energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) results show that the stoichiometry of the crystal is slightly shifted to Zn-rich and native defects of oxygen vacancies (OV) are formed during growth. Temperature-dependent Hall (TDH) measurement indicates that the as-grown ZnO crystal has a unique electrical property of relatively high carrier mobility (173 cm2 V−1 c−1 @ 290 K) with the presence of high carrier concentration (2.22 × 1017 cm−3 @ 290 K), which may be attributed to the high crystallinity of the sample together with the existence of intrinsic donors of oxygen vacancies.

Graphical abstract: Seeded growth of bulk ZnO crystals in a horizontal tubular furnace

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Publication details

The article was received on 03 Nov 2018, accepted on 27 Dec 2018 and first published on 18 Jan 2019


Article type: Paper
DOI: 10.1039/C8CE01886C
Citation: CrystEngComm, 2019,21, 1288-1292

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    Seeded growth of bulk ZnO crystals in a horizontal tubular furnace

    L. Fan, T. Xiao, C. Zhong, J. Wang, J. Chen, X. Wang, L. Peng and W. Wu, CrystEngComm, 2019, 21, 1288
    DOI: 10.1039/C8CE01886C

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