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Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs

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Abstract

Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.

Graphical abstract: Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs

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Publication details

The article was received on 23 Feb 2019, accepted on 09 Apr 2019 and first published on 09 Apr 2019


Article type: Communication
DOI: 10.1039/C9CC01526D
Citation: Chem. Commun., 2019, Advance Article

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    Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs

    R. Begum, X. Y. Chin, M. Li, B. Damodaran, T. C. Sum, S. Mhaisalkar and N. Mathews, Chem. Commun., 2019, Advance Article , DOI: 10.1039/C9CC01526D

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