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Issue 47, 2019
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Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

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Abstract

Control of the π–π interaction direction in a redox-active π-molecule based film led to the formation of new mechanistic nonvolatile resistive switching memory: a redox-active organic molecule, 2,5,8-tri(4-pyridyl)1,3-diazaphenalene, showed non-volatile bistable resistance states with a high on-off ratio, retention, and endurance only when the molecular orientation was anisotropic. Control experiments using redox-active/redox-inert organic molecules with isotropic/anisotropic molecular orientations implied that the formation of conductive oxidized π–π stacking layers from non-conductive neutral π–π stacking layers is responsible for resistive switching phenomena, indicating new mechanisms such as ReRAM. Our findings will give a comprehensive understanding of electron transport in organic solid materials based on the effects of redox-activity and molecular arrangement, leading to fabrication of a new class of ReRAM based on organic molecules.

Graphical abstract: Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

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Supplementary files

Article information


Submitted
22 Aug 2019
Accepted
13 Oct 2019
First published
17 Oct 2019

This article is Open Access
All publication charges for this article have been paid for by the Royal Society of Chemistry

Chem. Sci., 2019,10, 10888-10893
Article type
Edge Article

Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

J. Kim, H. Ohtsu, T. Den, K. Deekamwong, I. Muneta and M. Kawano, Chem. Sci., 2019, 10, 10888
DOI: 10.1039/C9SC04213J

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