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Issue 72, 2019, Issue in Progress
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Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

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Abstract

Topologically protected edge states of 2D quantum spin Hall (QSH) insulators have paved the way for dissipationless transport. In this regard, one of the key challenges is to find suitable QSH insulators with large bandgaps. Group IV analogues of graphene such as silicene, germanene, stanene, plumbene etc. are promising materials for QSH insulators. This is because their high spin–orbit coupling (SOC) and large bandgap opening may be possible by chemically decorating these group IV graphene analogues. However, finding suitable chemical groups for such decoration has always been a demanding task. In this work, we investigate the performance of a plumbene monolayer with –CX3 (X = H, F, Cl) chemical decoration and report very large bandgaps in the range of 0.8414 eV to 0.9818 eV with spin–orbit coupling, which is much higher compared to most other topological insulators and realizable at room temperature. The Image ID:c9ra07531c-t1.gif topological invariants of the samples are calculated to confirm their topologically nontrivial properties. The existence of edge states and topological nontrivial property are illustrated by investigating PbCX3 nanoribbons with zigzag edges. Lastly, the structural and electronic stability of the topological materials against strain are demonstrated to extend the scope of using these materials. Our findings suggest that these derivatives are promising materials for spintronic and future high performance nanoelectronic devices.

Graphical abstract: Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

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Article information


Submitted
17 Sep 2019
Accepted
09 Dec 2019
First published
19 Dec 2019

This article is Open Access

RSC Adv., 2019,9, 42194-42203
Article type
Paper

Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

S. Mahmud and Md. K. Alam, RSC Adv., 2019, 9, 42194
DOI: 10.1039/C9RA07531C

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