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Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

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Abstract

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C band (200–290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (trise ≈ 0.17 s and tdecay ≈ 0.14 s).

Graphical abstract: Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

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Article information


Submitted
11 Nov 2018
Accepted
20 Dec 2018
First published
11 Jan 2019

This article is Open Access

RSC Adv., 2019,9, 1394-1402
Article type
Paper

Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

X. Han, S. Feng, Y. Zhao, L. Li, Z. Zhan, Z. Tao, Y. Fan, W. Lu, W. Zuo and D. Fu, RSC Adv., 2019, 9, 1394
DOI: 10.1039/C8RA09307E

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    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
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    [Original citation] - Published by The Royal Society of Chemistry.

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