Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 2, 2019, Issue in Progress
Previous Article Next Article

Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Author affiliations

Abstract

For high-performance nanoscale Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx), which is thermodynamically unstable and easily desorbed. In this study, an atomic-layer-deposited AlN buffer layer was introduced between the crystalline ZrO2 high-K gate dielectrics and epitaxial Ge, in order to reduce the formation of interfacial GeOx. The results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy demonstrate that the AlN buffer layer suppressed the formation of interfacial GeOx. Hence, significant enhancement of the electrical characteristics of Ge metal-oxide-semiconductor (MOS) capacitors was achieved with a two-orders-of-magnitude reduction in the gate leakage current, a 34% enhancement of the MOS capacitance, and a lower interfacial state density. The results indicate that the AlN buffer layer is effective in providing a high-quality interface to improve the electrical performance of advanced Ge MOS devices.

Graphical abstract: Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Back to tab navigation

Article information


Submitted
14 Sep 2018
Accepted
03 Dec 2018
First published
02 Jan 2019

This article is Open Access

RSC Adv., 2019,9, 592-598
Article type
Paper

Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Chin-I. Wang, T. Chang, C. Wang, Y. Yin, J. Shyue, H. Lin and M. Chen, RSC Adv., 2019, 9, 592
DOI: 10.1039/C8RA07652A

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

Reproduced material should be attributed as follows:

  • For reproduction of material from NJC:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
  • For reproduction of material from PCCP:
    [Original citation] - Published by the PCCP Owner Societies.
  • For reproduction of material from PPS:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
  • For reproduction of material from all other RSC journals:
    [Original citation] - Published by The Royal Society of Chemistry.

Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.


Social activity

Search articles by author

Spotlight

Advertisements