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Issue 28, 2019
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A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices

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Abstract

The realization of p–n homojunctions, which can be achieved via spatially controlled carrier-type modulation, remains a challenge for two-dimensional transition metal dichalcogenides. Here, we report an effective method to tune intrinsic n-type few-layer MoSe2 to p-type through controlling precisely the ultraviolet-ozone treatment time, which can be attributed to the surface charge transfer from the underlying MoSe2 to MoOx (x < 3). The resulting hole mobility and concentration are ∼20.1 cm2 V−1 s−1 and ∼1.9 × 1012 cm−2, respectively, and the on–off ratio is ∼105, which are comparable to the values of pristine n-type MoSe2. Moreover, the lateral p–n homojunction prepared by partially treating MoSe2 displays a high rectification ratio of 2.4 × 104, an ideality factor of 1.1, and a high photoresponsivity of 0.23 A W−1 to the 633 nm laser at Vd = 0 V and Vg = 0 V due to the built-in potential in the p–n homojunction area. Our findings ensure the MoSe2 p–n diode as a promising candidate for future low-power operating photodevices.

Graphical abstract: A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices

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Supplementary files

Article information


Submitted
17 May 2019
Accepted
25 Jun 2019
First published
26 Jun 2019

Nanoscale, 2019,11, 13469-13476
Article type
Paper

A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices

X. Zheng, Y. Wei, J. Liu, S. Wang, J. Shi, H. Yang, G. Peng, C. Deng, W. Luo, Y. Zhao, Y. Li, K. Sun, W. Wan, H. Xie, Y. Gao, X. Zhang and H. Huang, Nanoscale, 2019, 11, 13469
DOI: 10.1039/C9NR04212A

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