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Issue 28, 2019
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Probing ballistic thermal conduction in segmented silicon nanowires

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Abstract

Ballistic heat conduction in semiconductors is a remarkable but controversial nanoscale phenomenon, which implies that nanostructures can conduct thermal energy without dissipation. Here, we experimentally probed ballistic thermal transport at distances of 400–800 nm and temperatures of 4–250 K. Measuring thermal properties of straight and serpentine silicon nanowires, we found that at 4 K heat conduction is quasi-ballistic with stronger ballisticity at shorter length scales. As we increased the temperature, quasi-ballistic heat conduction weakened and gradually turned into diffusive regime at temperatures above 150 K. Our Monte Carlo simulations illustrate how this transition is driven by different scattering processes and linked to the surface roughness and the temperature. These results demonstrate the length and temperature limits of quasi-ballistic heat conduction in silicon nanostructures, knowledge of which is essential for thermal management in microelectronics.

Graphical abstract: Probing ballistic thermal conduction in segmented silicon nanowires

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Publication details

The article was received on 07 May 2019, accepted on 30 Jun 2019 and first published on 05 Jul 2019


Article type: Paper
DOI: 10.1039/C9NR03863A
Nanoscale, 2019,11, 13407-13414

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    Probing ballistic thermal conduction in segmented silicon nanowires

    R. Anufriev, S. Gluchko, S. Volz and M. Nomura, Nanoscale, 2019, 11, 13407
    DOI: 10.1039/C9NR03863A

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