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Issue 10, 2019
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GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

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Abstract

We demonstrate high-frequency mechanical resonators in ballistic graphene p–n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 × 1 μm2, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime.

Graphical abstract: GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

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Publication details

The article was received on 10 Dec 2018, accepted on 18 Feb 2019 and first published on 19 Feb 2019


Article type: Paper
DOI: 10.1039/C8NR09963D
Nanoscale, 2019,11, 4355-4361
  • Open access: Creative Commons BY-NC license
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    GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction

    M. Jung, P. Rickhaus, S. Zihlmann, A. Eichler, P. Makk and C. Schönenberger, Nanoscale, 2019, 11, 4355
    DOI: 10.1039/C8NR09963D

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