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Issue 4, 2019
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A WSe2 vertical field emission transistor

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We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ∼100 V μm−1 and exhibits good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on the WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.

Graphical abstract: A WSe2 vertical field emission transistor

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Publication details

The article was received on 09 Nov 2018, accepted on 20 Dec 2018 and first published on 21 Dec 2018

Article type: Communication
DOI: 10.1039/C8NR09068H
Nanoscale, 2019,11, 1538-1548

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    A WSe2 vertical field emission transistor

    A. Di Bartolomeo, F. Urban, M. Passacantando, N. McEvoy, L. Peters, L. Iemmo, G. Luongo, F. Romeo and F. Giubileo, Nanoscale, 2019, 11, 1538
    DOI: 10.1039/C8NR09068H

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