Jump to main content
Jump to site search

Issue 4, 2019
Previous Article Next Article

A WSe2 vertical field emission transistor

Author affiliations

Abstract

We report the first observation of a gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ∼100 V μm−1 and exhibits good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on the WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.

Graphical abstract: A WSe2 vertical field emission transistor

Back to tab navigation

Publication details

The article was received on 09 Nov 2018, accepted on 20 Dec 2018 and first published on 21 Dec 2018


Article type: Communication
DOI: 10.1039/C8NR09068H
Nanoscale, 2019,11, 1538-1548

  •   Request permissions

    A WSe2 vertical field emission transistor

    A. Di Bartolomeo, F. Urban, M. Passacantando, N. McEvoy, L. Peters, L. Iemmo, G. Luongo, F. Romeo and F. Giubileo, Nanoscale, 2019, 11, 1538
    DOI: 10.1039/C8NR09068H

Search articles by author

Spotlight

Advertisements