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Issue 3, 2019
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Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

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Abstract

Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm−1 (normalized by the circumference of the fin) and around 500 μA μm−1 (only normalized by the fin size), while its ON/OFF ratio is more than 106 with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.

Graphical abstract: Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

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Article information


Submitted
17 Nov 2018
Accepted
07 Jan 2019
First published
07 Jan 2019

Nanoscale Horiz., 2019,4, 683-688
Article type
Communication

Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

Y. Lan, P. Chen, Y. Lin, M. Li, L. Li, Y. Tu, F. Yang, M. Chen and K. Li, Nanoscale Horiz., 2019, 4, 683
DOI: 10.1039/C8NH00419F

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