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Issue 12, 2019
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Emergence of valley selectivity in monolayer tin(ii) sulphide

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Abstract

The emergence of valley selectivity in tin(II) sulphide is explained with the use of density functional theory and the momentum operator matrix elements for the optical transitions. After application of electric stress, the polarization efficiency was found to decrease in the zigzag direction. Wannier functions are further used to derive an effective Tight Binding (TB) model. The velocity matrix elements of the Wannier functions reveal further details about how the p orbitals of Sn and S contribute to optical transitions. Using the TB model in the Wannier basis in a nanoribbon configuration, the bandgap shows an overall decrease as the width of the nanoribbon increases for both zigzag and armchair directions of the structure up to ≈42 Å further presenting opportunities for Optoelectronic applications.

Graphical abstract: Emergence of valley selectivity in monolayer tin(ii) sulphide

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Supplementary files

Article information


Submitted
03 Sep 2019
Accepted
02 Nov 2019
First published
11 Nov 2019

This article is Open Access

Nanoscale Adv., 2019,1, 4863-4869
Article type
Paper

Emergence of valley selectivity in monolayer tin(II) sulphide

E. Chatzikyriakou and J. Kioseoglou, Nanoscale Adv., 2019, 1, 4863
DOI: 10.1039/C9NA00555B

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