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Issue 8, 2019
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Molecular spectroscopy in a solid-state device

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Abstract

The quantification of the electronic transport energy gap of a molecular semiconductor is essential for pursuing any challenge in molecular optoelectronics. However, this remains largely elusive because of the difficulties in its determination by conventional spectroscopic methods. This communication presents an in-device molecular spectroscopy (i-MOS) technique, which permits measuring this gap seamlessly, in real device operative conditions, at room temperature and without any previous knowledge of the material's parameters. This result is achieved by determining the occupied and unoccupied molecular orbitals of an organic semiconductor thin-film by using a single three terminal solid-state device.

Graphical abstract: Molecular spectroscopy in a solid-state device

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Supplementary files

Article information


Submitted
10 Feb 2019
Accepted
18 Mar 2019
First published
07 May 2019

This article is Open Access

Mater. Horiz., 2019,6, 1663-1668
Article type
Communication

Molecular spectroscopy in a solid-state device

A. Atxabal, T. Arnold, S. Parui, E. Zuccatti, M. Cinchetti, F. Casanova, F. Ortmann and L. E. Hueso, Mater. Horiz., 2019, 6, 1663
DOI: 10.1039/C9MH00218A

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