Issue 8, 2019

Molecular spectroscopy in a solid-state device


The quantification of the electronic transport energy gap of a molecular semiconductor is essential for pursuing any challenge in molecular optoelectronics. However, this remains largely elusive because of the difficulties in its determination by conventional spectroscopic methods. This communication presents an in-device molecular spectroscopy (i-MOS) technique, which permits measuring this gap seamlessly, in real device operative conditions, at room temperature and without any previous knowledge of the material's parameters. This result is achieved by determining the occupied and unoccupied molecular orbitals of an organic semiconductor thin-film by using a single three terminal solid-state device.

Graphical abstract: Molecular spectroscopy in a solid-state device

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Article information

Article type
10 Feb 2019
18 Mar 2019
First published
07 May 2019
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2019,6, 1663-1668

Molecular spectroscopy in a solid-state device

A. Atxabal, T. Arnold, S. Parui, E. Zuccatti, M. Cinchetti, F. Casanova, F. Ortmann and L. E. Hueso, Mater. Horiz., 2019, 6, 1663 DOI: 10.1039/C9MH00218A

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