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Issue 3, 2019
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Flexible and transparent graphene complementary logic gates

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Abstract

In this study, flexible and transparent monolithic graphene transistors and complementary logic gates were fabricated using chemically doped graphene. The graphene channel was p- and n-doped with bis-(trifluoromethanesulfonyl)amine and poly(ethylene imine), respectively. Ion gel was utilized to gate the graphene transistor, and this facilitated low-voltage operation and yielded a coplanar-gate geometry. The resulting monolithic graphene transistors exhibited p-type or n-type transport depending on the type of dopant. The p-type and n-type graphene transistors were assembled together to fabricate various logic circuits, e.g., NOT, NAND, and NOR gates. Overall, the selective chemical doping of graphene enabled the realization of complementary logic gates, which represents a significant step in the application of graphene to future two-dimensional-based electronic devices.

Graphical abstract: Flexible and transparent graphene complementary logic gates

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Publication details

The article was received on 27 Nov 2018, accepted on 01 Mar 2019 and first published on 01 Mar 2019


Article type: Communication
DOI: 10.1039/C8ME00100F
Mol. Syst. Des. Eng., 2019,4, 484-490

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    Flexible and transparent graphene complementary logic gates

    A. Dathbun, S. Kim, S. Lee, D. K. Hwang and J. H. Cho, Mol. Syst. Des. Eng., 2019, 4, 484
    DOI: 10.1039/C8ME00100F

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