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Volume 213, 2019
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The interplay between structure and function in redox-based resistance switching

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Abstract

We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages. Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

Graphical abstract: The interplay between structure and function in redox-based resistance switching

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Article information


Submitted
11 Jun 2018
Accepted
03 Jul 2018
First published
03 Jul 2018

This article is Open Access

Faraday Discuss., 2019,213, 151-163
Article type
Paper

The interplay between structure and function in redox-based resistance switching

A. J. Kenyon, M. Singh Munde, W. H. Ng, M. Buckwell, D. Joksas and A. Mehonic, Faraday Discuss., 2019, 213, 151 DOI: 10.1039/C8FD00118A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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