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Issue 23, 2019
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Indium thiospinel In1−xxIn2S4 – structural characterization and thermoelectric properties

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Abstract

A detailed study of polycrystalline indium-based In1−xxIn2S4 (x = 0.16, 0.22, 0.28, and 0.33) thiospinel is presented (□ – vacancy). Comprehensive investigation of synthesis conditions, phase composition and thermoelectric properties was performed by means of various diffraction, microscopic and spectroscopic methods. Single-phase α- and β-In1−xxIn2S4 were found in samples with 0.16 ≤ x ≤ 0.22 and x = 0.33 (In2S3), respectively. In contrast, it is shown that In0.720.28In2S4 contains both α- and β-polymorphic modifications. Consequently, the thermoelectric characterization of well-defined α- and β-In1−xxIn2S4 is conducted for the first time. α-In1−xxIn2S4 (x = 0.16 and 0.22) revealed n-type semiconducting behavior, a large Seebeck coefficient (>|200| μV K−1) and moderate charge carrier mobility on the level of ∼20 cm2 V−1 s−1 at room temperature (RT). Decreases in charge carrier concentration (increase of electrical resistivity) and thermal conductivity (even below 0.6 W m−1 K−1 at 760 K) for larger In-content are observed. Although β-In0.670.33In2S4 (β-In2S3) is a distinct polymorphic modification, it followed the abovementioned trend in thermal conductivity and displayed significantly higher charge carrier mobility (∼104 cm2 V−1 s−1 at RT). These findings indicate that structural disorder in the α-modification affects both electronic and thermal properties in this thiospinel. The reduction of thermal conductivity counterbalances a lowered power factor and, thus, the thermoelectric figure of merit ZTmax = 0.2 at 760 K is nearly the same for both α- and β-In1−xxIn2S4.

Graphical abstract: Indium thiospinel In1−x□xIn2S4 – structural characterization and thermoelectric properties

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Publication details

The article was received on 27 Feb 2019, accepted on 05 May 2019 and first published on 21 May 2019


Article type: Paper
DOI: 10.1039/C9DT00890J
Dalton Trans., 2019,48, 8350-8360

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    Indium thiospinel In1−xxIn2S4 – structural characterization and thermoelectric properties

    P. Wyżga, I. Veremchuk, C. Himcinschi, U. Burkhardt, W. Carrillo-Cabrera, M. Bobnar, C. Hennig, A. Leithe-Jasper, J. Kortus and R. Gumeniuk, Dalton Trans., 2019, 48, 8350
    DOI: 10.1039/C9DT00890J

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