Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 35, 2019
Previous Article Next Article

Ionic liquid thin layer-induced memory effects in organic field-effect transistors

Author affiliations

Abstract

We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5–2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices.

Graphical abstract: Ionic liquid thin layer-induced memory effects in organic field-effect transistors

Back to tab navigation

Supplementary files

Article information


Submitted
24 Mar 2019
Accepted
31 May 2019
First published
31 May 2019

Phys. Chem. Chem. Phys., 2019,21, 18823-18829
Article type
Paper

Ionic liquid thin layer-induced memory effects in organic field-effect transistors

K. Eguchi, M. M. Matsushita and K. Awaga, Phys. Chem. Chem. Phys., 2019, 21, 18823
DOI: 10.1039/C9CP01647C

Social activity

Search articles by author

Spotlight

Advertisements