Surface oxygen vacancy defect engineering of p-CuAlO2via Ar&H2 plasma treatment for enhancing VOCs sensing performances

Bin Tong; Gang Meng; Zanhong Deng; Mati Horprathum; Annop Klamchuen; Xiaodong Fang

doi:10.1039/C9CC05881H

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Surface oxygen vacancy defect engineering of p-CuAlO₂via Ar&H₂ plasma treatment for enhancing VOCs sensing performances†

Bin Tong,^ab Gang Meng,

*^ac Zanhong Deng,^ac Mati Horprathum,^d Annop Klamchuen

^e and Xiaodong Fang

*^ac

Author affiliations

* Corresponding authors

^a Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, China
E-mail: menggang@aiofm.ac.cn, xdfang@aiofm.ac.cn

^b University of Science and Technology of China, Hefei 230026, China

^c Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences, Hefei 230031, China

^d Opto-Electrochemical Sensing Research Team, National Electronic and Computer Technology Center, Pathum Thani 12120, Thailand

^e National Nanotechnology Center, National Science and Technology Development Agency, Pathum Thani 12120, Thailand

Abstract

Ar&H₂ plasma treatment was proposed to enhance the response of a p-CuAlO₂ sensor toward volatile organic compounds. Comprehensive defect characterization studies indicate a substantial increase of surface unsaturated oxygen vacancy (V_O) defects via plasma treatment, which could provide active sites for molecule adsorption and the subsequent interfacial redox reaction.

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Article information

DOI: https://doi.org/10.1039/C9CC05881H
Article type: Communication
Submitted: 29 Jul 2019
Accepted: 03 Sep 2019
First published: 04 Sep 2019

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Chem. Commun., 2019,55, 11691-11694

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Surface oxygen vacancy defect engineering of p-CuAlO₂via Ar&H₂ plasma treatment for enhancing VOCs sensing performances

B. Tong, G. Meng, Z. Deng, M. Horprathum, A. Klamchuen and X. Fang, Chem. Commun., 2019, 55, 11691 DOI: 10.1039/C9CC05881H

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