Correction: Electronic and transport properties of Li-doped NiO epitaxial thin films
Abstract
Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al., J. Mater. Chem. C, 2018, 6, 2275–2282.
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* Corresponding authors
a
Department of Chemical and Biochemical Engineering, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China
E-mail:
kelvinzhang@xmu.edu.cn
b Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, UK
c Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, DE-10117 Berlin, Germany
d Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
e Materials Science & Engineering, Binghamton University, Binghamton, New York 13902, USA
f Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, UK
g Department of Physics, University of Liverpool, Liverpool L69 3BX, UK
Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al., J. Mater. Chem. C, 2018, 6, 2275–2282.
J. Y. Zhang, W. W. Li, R. L. Z. Hoye, J. L. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. J. Wahila, L. F. J. Piper, T.-L. Lee, H. J. Edwards, V. R. Dhanak and K. H. L. Zhang, J. Mater. Chem. C, 2018, 6, 4326 DOI: 10.1039/C8TC90056F
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