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Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

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Abstract

The outstanding thermal properties, mechanical properties and large optical bandgap of hexagonal boron nitride (h-BN) make it very attractive for various applications in ultrathin 2D microelectronics. However, the synthesis of large lateral size and uniform h-BN thin films with a high breakdown strength still remains a great challenge. Here, we comprehensively investigated the effect of growth conditions on the thickness of h-BN films via low pressure chemical vapor deposition (LPCVD). By optimizing the LPCVD growth parameters with electropolished Cu foils as the deposition substrates and developing customized “enclosure” quartz-boat reactors, we achieved thickness-tunable (1.50–10.30 nm) growth of h-BN thin films with a smooth surface (RMS roughness is 0.26 nm) and an ultra-large area (1.0 cm × 1.0 cm), meanwhile, the as-grown h-BN films exhibited an ultra-high breakdown strength of ∼10.0 MV cm−1, which is highly promising for the development of electrically reliable 2D microelectronic devices with an ultrathin feature.

Graphical abstract: Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

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Publication details

The article was received on 23 Oct 2018, accepted on 20 Dec 2018 and first published on 21 Dec 2018


Article type: Paper
DOI: 10.1039/C8TC05345F
Citation: J. Mater. Chem. C, 2019, Advance Article
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    Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

    D. Zhang, F. Wu, Q. Ying, X. Gao, N. Li, K. Wang, Z. Yin, Y. Cheng and G. Meng, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C8TC05345F

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