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Issue 46, 2018
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Deposition rate related DPA OFET threshold voltage shift and hysteresis variation

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Abstract

2,6-Diphenylanthracene (DPA) thin films have been deposited with a rate range of 0.01 Å s−1 to 3.00 Å s−1 to elucidate the influence of deposition rate on the figures of merit other than the mobility of organic field-effect transistors (OFETs). Transfer IV curves suggest that the threshold voltage (Vth) and hysteresis of DPA OFETs can be roughly controlled within limits by varying the deposition rate.

Graphical abstract: Deposition rate related DPA OFET threshold voltage shift and hysteresis variation

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Publication details

The article was received on 22 Oct 2018, accepted on 04 Nov 2018 and first published on 06 Nov 2018


Article type: Communication
DOI: 10.1039/C8TC05327H
Citation: J. Mater. Chem. C, 2018,6, 12498-12502

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    Deposition rate related DPA OFET threshold voltage shift and hysteresis variation

    X. Gao, S. Duan, J. Li, D. Khan, Y. Zou, L. Zheng, J. Liu, X. Ren and W. Hu, J. Mater. Chem. C, 2018, 6, 12498
    DOI: 10.1039/C8TC05327H

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