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Deposition rate related 2,6-diphenylanthracene OFETs threshold voltage shift and hysteresis variation

Abstract

Thermal evaporation has been restudied to inquiry the influence of deposition rate on figure of merits other than mobility of organic field-effect transistors (OFETs). Deposition rates range from 0.01Å/s to 3.00Å/s have been used to fabricate 2,6-diphenylanthracene (DPA) thin-film. we demonstrated that DPA OFETs transfer curve hysteresis increase and both the off-to-on (Vth1) and on-to-off (Vth2) threshold voltage shift to a more positive value with the deposition rate rise. The crystalline quality analysis excluded the film crystalline structure difference caused change. Furthermore, based on previous studies and morphology measurement, we assumed that Vth shift as well as hysteresis variation are originated from trap density change embedded in films, which is in accordance with ultraviolet photoelectron spectroscopy (UPS) measurement. The results provide guidance to take advantage of deposition rate to roughly adjust the Vth and hysteresis of DPA based OFETs, which can further benefit the development of DPA based functional FETs.

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Publication details

The article was accepted on 04 Nov 2018 and first published on 06 Nov 2018


Article type: Communication
DOI: 10.1039/C8TC05327H
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Deposition rate related 2,6-diphenylanthracene OFETs threshold voltage shift and hysteresis variation

    X. Gao, S. Duan, J. Li, D. Khan, Y. Zou, L. Zheng, J. Liu, X. Ren and W. Hu, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC05327H

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