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Issue 48, 2018
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An 8.7% efficiency co-electrodeposited Cu2ZnSnS4 photovoltaic device fabricated via a pressurized post-sulfurization process

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Abstract

Cu2ZnSnS4 (CZTS) photovoltaic devices with Cu–Zn–Sn–S precursors were prepared by co-electrodeposition. This is a low-cost, environmentally favorable and non-vacuum process with broad industrial prospects. However, due to the relatively narrow range of phase forming conditions and insufficient sulfurization, it is difficult to obtain fine control over the composition of CZTS films with pure phase structures and uniform grain size distributions. In this work, co-electrodeposited Cu–Zn–Sn–S precursors were sulfurized in an atmosphere of sulfur (S) and nitrogen gas (N2). The S contents in the CZTS films were controlled by varying the N2 gas pressure. After optimization, we obtained a maximum efficiency of 8.7%, which is the highest reported for co-electrodeposited CZTS devices to date.

Graphical abstract: An 8.7% efficiency co-electrodeposited Cu2ZnSnS4 photovoltaic device fabricated via a pressurized post-sulfurization process

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Publication details

The article was received on 07 Oct 2018, accepted on 23 Nov 2018 and first published on 26 Nov 2018


Article type: Paper
DOI: 10.1039/C8TC05058A
Citation: J. Mater. Chem. C, 2018,6, 13275-13282
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    An 8.7% efficiency co-electrodeposited Cu2ZnSnS4 photovoltaic device fabricated via a pressurized post-sulfurization process

    C. Zhang, J. Tao and J. Chu, J. Mater. Chem. C, 2018, 6, 13275
    DOI: 10.1039/C8TC05058A

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