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Fabrication of High Performance ZnIn2S4/Si Heterostructure Photodetector Array for Weak Signal Detection

Abstract

Owing to their exciting electronic and optical attributes, layered materials have attracted great interest in next-generation optoelectronic devices, especially in photodetectors. However, suffering from large dark current, low detectivity and small signal-to-noise ratio, performances of photodetectors based on bare layered materials are not satisfactory for weak signal detection. Integrating layered materials with the mature silicon (Si) technology offers a feasible scenario to overcome these drawbacks. Herein, we report the facile synthesis of layered ZnIn2S4 nanosheets and the construction of ZnIn2S4/Si heterostructure photodetector array for weak signal detection. Due to the interfacial charge transfer, which significantly suppresses the dark current and accelerates the separation of photoexcited electron-hole pairs, the fabricated ZnIn2S4/Si photodetector array present an ultralow dark current (18 pA), as well as superior signal-to-noise ratio (11572),stable photoswitching and high detectivity (2×1012 Jones). Notably, the heterostructure device exhibits outstanding weak signal detection capabilities, which have been successfully demonstrated by the detection of weak light sources including cell phone screen, flashlight and lighter. These results demonstrate that the synergetic effect of layered materials and mature semiconductor technology shows great potential in next-generation optoelectronic applications.

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Publication details

The article was received on 17 Sep 2018, accepted on 08 Nov 2018 and first published on 09 Nov 2018


Article type: Paper
DOI: 10.1039/C8TC04692A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Fabrication of High Performance ZnIn2S4/Si Heterostructure Photodetector Array for Weak Signal Detection

    Z.Q. Zheng, J. Yao, W.J. Li, L. Huang, Y. Xiao, Z. Mu, G. Yang and J. Li, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC04692A

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