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Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

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Abstract

The synthesis and characterization of a novel, low cost, amorphous wide-bandgap semiconductor via X-ray induced decomposition of strontium oxalate at high pressure have been demonstrated. By means of IR spectroscopy, the final product is identified as a mixture of strontium carbonate, strontium oxalate and CO-derived materials. Band gap measurements demonstrate that the final product exhibits a much lower band gap (2.45 eV) than the initial strontium oxalate powder (4.07 eV), suggesting that the synthesized material can be highly useful in electronic and optical applications.

Graphical abstract: Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

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Publication details

The article was received on 06 Sep 2018, accepted on 31 Oct 2018 and first published on 02 Nov 2018


Article type: Communication
DOI: 10.1039/C8TC04496A
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

    E. Evlyukhin, E. Kim, P. Cifligu, D. Goldberger, S. Schyck, B. Harris, S. Torres, G. R. Rossman and M. Pravica, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC04496A

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