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Precise Control the Microstructural, Optical, and Electrical Properties of Ultrathin Ga2O3 Film through Nanomixing with Few Atom Thick SiO2 Interlayer via Plasma Enhanced Atomic Layer Deposition

Abstract

Ultrathin Ga2O3 films nanomixed with few atom thick SiO2 interlayer were deposited on silicon and quartz substrates through plasma enhanced atomic layer deposition. Upon adjusting the number of SiO2 atomic layers, different Si doping level in Ga2O3 films was obtained. Herein, we report for the first time using this method to investigate the doping effect and realize precisely controlling the microstructural, optical, and electrical properties of the Ga2O3 films. The experiment result indicated that the microstructure like density, roughness, and chemical composition of the films are all affected by the doped number of SiO2 atomic layers. As the Si doping concentration increased in the films, the refractive index of the Ga2O3 films decreased monotonically, the optical transparency improved, and the average transmittances were >95% from ultraviolet to visual wavelengths for all Si-doped Ga2O3 films. Moreover, the energy band-gap increased as the increase of Si composition, changing from ~4.8 eV for an undoped film to ~5.1 eV for a film with a 20 at.% Si doping level. Meanwhile, the breakdown field of the Ga2O3 film can be linear improved from 6.8 MV/cm to 10.7 MV/cm as a function of the Si content. More important, this result enlighten us that the breakdown field of the Ga2O3 film can be further improved by increasing the Si doping concentration. This work provides a mean to expand new properties of the doped films and develop Ga2O3 film-based devices, such as transparent electrodes, photodetectors, thin film transistors, or high-power, high-voltage devices.

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Publication details

The article was received on 30 Aug 2018, accepted on 07 Oct 2018 and first published on 08 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04335C
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Precise Control the Microstructural, Optical, and Electrical Properties of Ultrathin Ga2O3 Film through Nanomixing with Few Atom Thick SiO2 Interlayer via Plasma Enhanced Atomic Layer Deposition

    H. Ma, H. Lu, T. Wang, J. Yang, X. Li, J. Chen, J. Tao, J. Zhu, Q. Guo and D. W. Zhang, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC04335C

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