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Issue 43, 2018
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Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode

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Abstract

Two-dimensional (2D) material-based P–N junctions are unique building blocks for next-generation optoelectronics with the advantages of atomic thinness, flexibility and low cost. However, their device performances are limited due to either weak photo-absorption or low-quality junctions. Herein, we demonstrate a high-quality homogeneous and seamless P–N junction based on multilayer WSe2 instead of the reported monolayer structure or van der Waals junction and present its optoelectronic applications as a diode, photovoltaic cell and photodetector with high performances. Our WSe2 P–N junction exhibits ideal diode behaviour with an ideal factor close to 1 and rectifying ratio of 105. It also shows significant photovoltaic properties with VOC of ∼0.8 V and PCE of up to 6.2% under 635 nm light illumination. As a photodiode, it produces the maximum responsivity of 486 mA W−1, external quantum efficiency of ∼90%, fast speed below 4 ms and broadband spectral coverage up to the near-infrared region. This study demonstrates a high-performance 2D-based P–N diode as multifunctional optoelectronics in a single device, which holds promise to revolutionize electronic and optoelectronic technology.

Graphical abstract: Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode

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Publication details

The article was received on 27 Aug 2018, accepted on 11 Oct 2018 and first published on 12 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04295K
Citation: J. Mater. Chem. C, 2018,6, 11673-11678
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    Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode

    Y. Yang, N. Huo and J. Li, J. Mater. Chem. C, 2018, 6, 11673
    DOI: 10.1039/C8TC04295K

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