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Gate-tunable and High Optoelectronic Performance in Multilayer WSe2 P-N Diode

Abstract

Two-dimensional (2D) materials based P-N junctions have rendered unique building blocks for next-generation of optoelectronics with benefits in atomically thin, flexibility and low-cost. However, the device performances are much limited due to either weak photo-absorption or low quality of junctions. Here we demonstrate a high quality of homogeneous and seamless P-N junction based on multilayer WSe2 instead of reported monolayer structure or van der Waals junction, and present its optoelectronic applications as diode, photovoltaic cell and photodetector with high performances. Our WSe2 P-N junction exhibits ideal diode behaviour with ideal factor close to 1 and rectifying ratio of 105. It also shows significant photovoltaic properties with VOC of ~0.8 V and PCE up to 6.2% under 635 nm light illumination. As a photodiode, it produces the maximum responsivity of 486 mA/W, external quantum efficiency of ~90%, fast speed below 4 ms and broadband spectral coverage up to near-infrared region. This work demonstrates a high performance 2D-based P-N diode acting as multifunctional optoelectronics in single device, and holds a promise to revolutionize electronic and optoelectronic technology.

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Publication details

The article was received on 27 Aug 2018, accepted on 11 Oct 2018 and first published on 12 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04295K
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Gate-tunable and High Optoelectronic Performance in Multilayer WSe2 P-N Diode

    Y. Yang, N. Huo and J. Li, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC04295K

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