Radiation damage effects in Ga2O3 materials and devices

Abstract

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga₂O₃, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga₂O₃ are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga₂O₃ electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.