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Issue 42, 2018
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Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

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Abstract

Exploring two-dimensional (2D) crystals with intrinsic room-temperature magnetism is of particular importance to develop practical spintronics applications at the nanoscale. Here, we report the electronic and magnetic properties of a freestanding 2D NbS2 crystal on the basis of first-principles calculations. Our results demonstrate that the 2D NbS2 monolayer is a bipolar magnetic semiconductor with a spin bandgap of 0.27 eV by using the screened hybrid density functional HSE06 method. In particular, both electron and hole doping could induce the transition from a bipolar magnetic semiconductor to a half metal in NbS2 nanosheets, where the spin-polarization direction of carriers in half-metallic NbS2 nanosheets can be tuned with the doping type. The Monte Carlo simulation predicts a Curie temperature of over 141 K in the 2D NbS2 crystal, which can be enhanced up to 273 K by hole doping or applying a biaxial tensile strain. These findings imply the great potential of 2D NbS2 nanosheets in nanoscale spintronics applications.

Graphical abstract: Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

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Publication details

The article was received on 22 Aug 2018, accepted on 30 Sep 2018 and first published on 01 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04188A
Citation: J. Mater. Chem. C, 2018,6, 11401-11406
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    Bipolar magnetism in a two-dimensional NbS2 semiconductor with high Curie temperature

    Y. Sun, Z. Zhuo and X. Wu, J. Mater. Chem. C, 2018, 6, 11401
    DOI: 10.1039/C8TC04188A

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