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Solution-processed silver sulphide nanocrystal film for resistive switching memories

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Abstract

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As an alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as a resistive switching medium, a layer built from colloidal Ag2−xS nanocrystals – compatible with solution-processed approaches. The effects of the electrode size (from macro- to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and a reliable ION/IOFF ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an ION/IOFF ratio up to 103 at low power consumption (0.1 V read-out), which outperforms previous results in the literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.

Graphical abstract: Solution-processed silver sulphide nanocrystal film for resistive switching memories

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Publication details

The article was received on 14 Aug 2018, accepted on 21 Oct 2018 and first published on 23 Oct 2018


Article type: Paper
DOI: 10.1039/C8TC04068K
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Solution-processed silver sulphide nanocrystal film for resistive switching memories

    B. Martín-García, D. Spirito, R. Krahne and I. Moreels, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC04068K

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