A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity

Abstract

Sb₂Se₃ is a highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb₂Se₃ ((Sn_xSb_1−x)₂Se₃) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn⁴⁺, the (Sn_xSb_1−x)₂Se₃ nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (Sn_xSb_1−x)₂Se₃ nanorod film shows a higher responsivity (6.21 A W⁻¹) and external quantum efficiency (906%), a lower noise equivalent power (3.14 × 10⁻¹³ W Hz^−1/2), and a fast response time (0.04 s), surpassing the performance of the Sb₂Se₃ nanorod film photodetector. In addition, the (Sn_xSb_1−x)₂Se₃ nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (Sn_xSb_1−x)₂Se₃ nanorods are promising for utilization as highly efficient broadband photodetectors.