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High performance broadband photodetector based on (SnxSb1-x)2Se3 nanorods with enhanced electrical conductivity

Abstract

The Sb2Se3 is highly interesting narrow band gap semiconductor with promising applications in new-generation electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity which limits its broader scope of applications. To overcome this challenge, the Sn-doped Sb2Se3 ((SnxSb1-x)2Se3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing doping concentration of Sn4+, the (SnxSb1-x)2Se3 nanorods exhibit several orders of magnitude improvement in electrical conductivity which originates from increase of carrier concentration. The photodetector based on the (SnxSb1-x)2Se3 nanorod film shows a higher responsivity (6.21 A/W) and external quantum efficiency (906%), lower noise equivalent power (3.14×10-13 W/Hz1/2), and fast response time (0.04 s), surpassing the performance of the Sb2Se3 nonorod film photodetector. In addition, the (SnxSb1-x)2Se3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1-x)2Se3 nanorods are promising for the utilizations as highly efficient broadband photodetectors.

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Publication details

The article was received on 02 Aug 2018, accepted on 12 Sep 2018 and first published on 14 Sep 2018


Article type: Paper
DOI: 10.1039/C8TC03834A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    High performance broadband photodetector based on (SnxSb1-x)2Se3 nanorods with enhanced electrical conductivity

    S. Chen, K. Shehzad, X. Qiao, X. Luo, X. Liu, Y. Zhang, X. Zhang, Y. Xu and X. Fan, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC03834A

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