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Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps

Abstract

Thermal quenching is one serious limiting factor on the high-power phosphor-converted white-light-emitting diodes (pc-WLEDs), due to the temperature increase resulting in the emission loss by non-radiative transitions. Herein, we report new Tb3+-doped Sr8ZnSc(PO4)7 phosphors, with zero-thermal-quenching and tunable photoluminescence behaviors. As verified by thermoluminescence (TL) spectra, the carriers captured by shallow traps were transferred to 5D3 energy level of Tb3+ compensating the inhibition on blue 5D3→7FJ emissions from the increasing concentration x of Tb3+, therefore, the emission color were tuned from bright blue (0.205, 0.186) to white (0.215, 0.273) finally to bright green (0.245, 0.411) upon 370 nm UV excitation as a function of x. In addition, the zero-thermal-quenching behavior at high temperature up to 225 °C was benefited from the carriers captured by deeper traps. Thus, the reported Sr8ZnSc(PO4)7:xTb3+ phosphors may be candidates for high-power pc-WLEDs.

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Publication details

The article was received on 17 Jul 2018, accepted on 07 Aug 2018 and first published on 09 Aug 2018


Article type: Paper
DOI: 10.1039/C8TC03515F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps

    Y. Chen, B. Yu, J. Gou and S. Liu, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC03515F

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