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Atomically thin semiconducting penta- PdP2 and PdAs2 with ultrahigh carrier mobility

Abstract

It is highly desirable to reach a high carrier mobility in two-dimensional (2D) atomic crystals with a modest band gap for electronic applications. In this study, two 2D semiconducting materials, penta-PdX2 (X=P, As), are found to be promising candidates to approach this goal. Both penta-PdP2 and penta-PdAs2 have a band gap about 0.7-0.8 eV. Their carrier mobility is up to 104 cm2V-1s-1 for electron and 105 cm2V-1s-1 for hole, among the highest in 2D semiconductors. Moreover, effective mass and band gap can be effectively tuned by applying a biaxial strain. The electron effective mass climbs up firstly and then largely declines under tensile load with a turning point at 5% for penta-PdP2 and 2% for penta-PdAs2. Furthermore, penta-PdX2 monolayers exhibit strong optical absorption in a wide wavelength range. All these outstanding properties render penta-PdX2 promising candidates for ultra-fast electronic and optoelectronic applications.

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Publication details

The article was received on 09 Jul 2018, accepted on 07 Aug 2018 and first published on 09 Aug 2018


Article type: Communication
DOI: 10.1039/C8TC03368D
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Atomically thin semiconducting penta- PdP2 and PdAs2 with ultrahigh carrier mobility

    H. Yuan, Z. Li and J. Yang, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC03368D

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