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Highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers

Abstract

Herein, highly-efficient quantum dot light-emitting diode (QLED) with stacked blue and yellow quantum dot (QD) layers can be demonstrated to output white light. The buffer layer of ZnO nanoparticles (NPs) inserted between two QD layers can prevent them from mixing and penetrating. In order to promote charge balance, Zn0.95Mg0.05O was employed as the electron transport layer (ETL), which can block excessive electrons due to the 0.07 eV higher conduction band minimum (CBM) level compared to that of pristine ZnO, leading to the suppression of the exciton quenching. In addition, the less defect concentration and lowered conductivity of Zn0.95Mg0.05O due to the reduction of oxygen vacancies by doping Mg element into ZnO can also benefit the inhibition of exciton quenching. The device can be demonstrated with a maximum luminance current efficiency of 24.6 cd/A and power efficiency of 25.8 lm/W, exhibiting 19% and 38% enhancement, respectively. The strategy demonstrated here paves a promising way to realize highly efficient white QLED and also other optoelectronic device.

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Publication details

The article was received on 20 Jun 2018, accepted on 09 Jul 2018 and first published on 11 Jul 2018


Article type: Paper
DOI: 10.1039/C8TC03014F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers

    L. Wang, J. Pan, J. Qian, W. Lei, W. Wu, W. Zhang, D. K. Goto and J. Chen, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC03014F

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