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Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on buffered YSZ substrate through interface reaction

Abstract

In this study, we used pulsed laser deposition to successfully grow epitaxial Hf0.5Zr0.5O2 (HZO) films on (001)-, (011)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates using TiN as bottom electrode. It is found that the TiO2 buffer layer formed by interface reaction is the key to the epitaxial growth. The epitaxial HZO films (~ 15 nm in thickness) exhibit ferroelectric behaviour with a remnant polarization of 7-30 C/cm2 and a coercive field of 1.1 - 2.3 MV/cm. Using piezoresponse force microscopy, polar domains can be written/read and reversibly switched with a phase change of 180 in all the films. X-ray diffraction and high-resolution transmission electron microscopy reveal the presence of nano domains, and clear epitaxial relation among different layers whose interfaces are relaxed by reconstruction. X-ray absorption spectroscopy provides deep insight into the microstructural origin of ferroelectricity in HZO. A large interface strain stabilized ferroelectric state is observed which is manifested as non-centrosymmetric Pca21 phase.

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Publication details

The article was received on 15 Jun 2018, accepted on 07 Aug 2018 and first published on 09 Aug 2018


Article type: Paper
DOI: 10.1039/C8TC02941E
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on buffered YSZ substrate through interface reaction

    T. Li, N. Zhang, Z. Sun, C. Xie, M. Ye, S. Mazumdar, L. Shu, Y. Wang, D. Wang, L. Chen, S. Ke and H. Huang, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC02941E

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