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High performance, self-powered photodetectors based on graphene/silicon Schottky junction diode

Abstract

The electron-hole pair separation and photocurrent conversion at the two-dimensional (2D) and three-dimensional (3D) hybrid interfaces are important for achieving high performance, self-powered optoelectronic devices such as photodetectors. In this regard, herein we design and demonstrate an integrated graphene/silicon (Gr/Si) vander Walls (vdW) heterostructure for high-performance photodetectors with graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias. The self-powered photodetector functions under the mechanism of photovoltaic effect and exhibits a responsivity as high as 510 mA/W with photo switching ratio of 105 and response time of 130 µ sec. The high-performance vdW heterostructure demonstrated herein is attributed to the Schottky barrier that effectively prolongs the lifetime of photo-excited carriers, resulting in a fast separation and transport of photoexcited carriers. The self-powered photodetector demonstrated herein with superior light harvesting and carrier transport behaviour is expected to open the window for the technological implementation of Si-based monolithic optoelectronic devices.

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Supplementary files

Publication details

The article was received on 07 Jun 2018, accepted on 02 Aug 2018 and first published on 08 Aug 2018


Article type: Paper
DOI: 10.1039/C8TC02786B
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    High performance, self-powered photodetectors based on graphene/silicon Schottky junction diode

    D. Periyanagounder, P. Gnanasekar, P. Varadhan, J. He and J. Kulandaivel, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC02786B

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