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Issue 35, 2018
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High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

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Abstract

Electron–hole pair separation and photocurrent conversion at two-dimensional (2D) and three-dimensional (3D) hybrid interfaces are important for achieving high performance, self-powered optoelectronic devices such as photodetectors. In this regard, herein, we designed and demonstrated a graphene/silicon (Gr/Si) (2D/3D) van der Waals (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and shows good performance as a self-powered detector, responding to 532 nm at zero bias. The self-powered photodetector functions under the mechanism of photovoltaic effect and exhibits responsivity as high as 510 mA W−1 with a photo switching ratio of 105 and a response time of 130 μs. The high-performance vdW heterostructure photodetector demonstrated herein is attributed to the Schottky barrier that effectively prolongs the lifetime of photo-excited carriers, resulting in fast separation and transport of photoexcited carriers. The self-powered photodetector with superior light harvesting and carrier transport behaviour is expected to open a window for the technological implementation of Si-based monolithic optoelectronic devices.

Graphical abstract: High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

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Publication details

The article was received on 07 Jun 2018, accepted on 02 Aug 2018 and first published on 08 Aug 2018


Article type: Paper
DOI: 10.1039/C8TC02786B
Citation: J. Mater. Chem. C, 2018,6, 9545-9551
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    High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

    D. Periyanagounder, P. Gnanasekar, P. Varadhan, J. He and J. Kulandaivel, J. Mater. Chem. C, 2018, 6, 9545
    DOI: 10.1039/C8TC02786B

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